stp7nb60 STP7NB60FP n - channel enhancement mode powermesh ? mosfet n typical r ds(on) = 1.0 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, sgs-thomson has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram march 1998 to-220 to-220fp 1 2 3 1 2 3 absolute maximum ratings symbol parameter value unit stp7nb60 STP7NB60FP v ds drain-source voltage (v gs = 0) 600 v v dgr drain- gate voltage (r gs = 20 k w ) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 7.2 4.1 a i d drain current (continuous) at t c = 100 o c 4.5 2.6 a i dm ( ) drain current (pulsed) 28.8 28.8 a p tot total dissipation at t c = 25 o c 125 40 w derating factor 1.0 0.32 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4.5 4.5 v/ns v iso insulation withstand voltage (dc) ? 2000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 7a, di/dt 200 a/ m s, v dd v (br)dss , tj t jmax type v dss r ds(on) i d stp7nb60 STP7NB60FP 600 v 600 v < 1.2 w < 1.2 w 7.2 a 4.1 a 1/9
thermal data to-220 to220-fp r thj-case thermal resistance junction-case max 1.0 3.13 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 7.2 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 580 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 3.6 a 1.0 1.2 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 7.2 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 3.6 a 4 5.3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1250 165 16 1625 223 22 pf pf pf stp7nb60/fp 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 300 v i d = 3.6 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 18 8 27 12 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v i d = 7.2 a v gs = 10 v 30 9.9 13.3 45 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480 v i d = 7.2 a r g = 4.7 w v gs = 10 v (see test circuit, figure 5) 8 5 15 12 8 23 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 7.2 28.8 a a v sd ( * ) forward on voltage i sd = 7.2 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7.2 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 530 4.5 17 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-220 safe operating area for to-220fp stp7nb60/fp 3/9
thermal impedance for to-220 output characteristics transconductance thermal impedance forto-220fp transfer characteristics static drain-source on resistance stp7nb60/fp 4/9
gate charge vs gate-source voltage normalized gate threshold voltage vs temperature source-drain diode forward characteristics capacitance variations normalized on resistance vs temperature stp7nb60/fp 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times stp7nb60/fp 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c stp7nb60/fp 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data stp7nb60/fp 8/9
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsa bility for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication su persedes and replaces all information previously supplied. sgs-thomson microelec tronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-t homson microe lectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelec tronics gr oup of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a . . . stp7nb60/fp 9/9
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